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參數(shù)資料
| 型號(hào)： | MXLSMCGLCE90ATR |
| 廠商： | MICROSEMI CORP |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| 封裝： | PLASTIC, SMCG, 2 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 316K |
| 代理商： | MXLSMCGLCE90ATR |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
________________________________________________________________________________________________________________________________
RF01002 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
GRAPHS
tp
– Pulse Time – sec
Test wave form parameters
T
– Temperature –
C
tr = 10 s, tp = 1000 s
FIGURE 1 Peak Pulse Power vs. Pulse Time
FIGURE 2 Pulse Waveform
FIGURE 3 Derating curve
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional
low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5.
In
applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low
capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low
capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. The Microsemi recommended
rectifier part number for the application in
Figure 5 is the “SMBJLCR80” or “SMBGLCR80” depending on the terminal configuration
desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for
both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional
configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
FIGURE 4
FIGURE 5
FIGURE 6
TVS with internal low
Optional Unidirectional
Optional Bidirectional
capacitance rectifier diode
configuration (TVS and
configuration (two TVS
separate rectifier diode
devices in anti-parallel)
in parallel)
P
PP
–
P
e
a
k
P
u
ls
e
P
o
w
e
r
–
kW
P
e
a
k
P
u
ls
e
P
o
w
e
r
(P
PP
)
o
r
C
u
rr
e
n
t
(I
PP
)
in
p
e
rc
e
n
t
o
f
2
5
o C
ra
ting
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