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參數(shù)資料
| 型號(hào)： | MXLSMBJSAC6.0E3 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類(lèi)： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 525K |
| 代理商： | MXLSMBJSAC6.0E3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01021 Rev A, October 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MSMBJSAC5.0 thru MSMBJSAC75, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional up screening available by replacing the M prefix with MA, MX or MXL.
These
prefixes specify various screening and conformance inspection options based on
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options
Low capacitance performance of 30pF
Suppresses transients up to 500 W Peak Pulse Power @ 10/1000
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices ava
ilable by adding an “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines per select waveforms in RTCA/DO-160F (see
MicroNote 130 for Waveform 4 and 5A capability) & ARINC 429 with bit rates of 100 kb/s (per
ARINC 429, Part 1, par. 2.4.1.1)
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MSMBJSAC5.0 to MSMBJSAC75
o
Class 2: MSMBJSAC5.0 to MSMBJSAC45
o
Class 3: MSMBJSAC5.0 to MSMBJSAC22
o
Class 4: MSMBJSAC5.0 to MSMBJSAC10
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance
o
Class 1: MSMBJSAC5.0 to MSMBJSAC26
o
Class 2: MSMBJSAC5.0 to MSMBJSAC15
o
Class 3: MSMBJSAC5.0 to MSMBJSAC7.0
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 C: 5
00 watts at 10/1000 μs with impulse repetition rate
(duty factor) of 0.01 % or less*
tclamping (0 volts to VBR min.): < 5 ns theoretical for unidirectional
Operating and Storage temperature: -65 °C to +150 °C
Steady-State Power dissipation*: 2.5 watts at TL = +75 C
Solder temperatures: 260 C for 10 s (maximum)
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff
voltage) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the
TVS element.
Also see Figures 5 and 6 for further protection details in rated peak pulse power for
unidirectional and bidirectional configurations respectively.
DO-214AA
SURFACE MOUNT
500 Watt Low Capacitance
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional construction
- Available J-bend termination
- Selections for 5.0 to 75 V standoff voltages (VWM)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MASMBJSAC15E3 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| MXSMBJSAC26 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| MXSMBJSAC8.0 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| MASMBJSAC6.0 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| MXLSMBJSAC36E3 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MXLSMBJSAC7.0 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 7VWM 12.6VC DO214AA 制造商:Microsemi Corporation 功能描述:TVS 500W UNIDIRECT DO-214AA |
| MXLSMBJSAC7.0E3 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 7VWM 12.6VC DO214AA 制造商:Microsemi Corporation 功能描述:TVS 500W UNIDIRECT DO-214AA |
| MXLSMBJSAC75 | 功能描述:TVS DIODE 75VWM 121VC DO214AA 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500 包裝:散裝 零件狀態(tài):在售 類(lèi)型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關(guān)態(tài)（典型值）:75V 電壓 - 擊穿（最小值）:83.3V 電壓 - 箝位（最大值）@ Ipp:121V 電流 - 峰值脈沖（10/1000μs）:4.1A 功率 - 峰值脈沖:500W 電源線路保護(hù):無(wú) 應(yīng)用:通用 不同頻率時(shí)的電容:30pF @ 1MHz 工作溫度:-65°C ~ 150°C（TJ） 安裝類(lèi)型:表面貼裝 封裝/外殼:DO-214AA，SMB 供應(yīng)商器件封裝:SMBJ（DO-214AA） 標(biāo)準(zhǔn)包裝:1 |
| MXLSMBJSAC75E3 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 75VWM 121VC DO214AA |
| MXLSMBJSAC8.0 | 功能描述:TVS DIODE 8VWM 13.4VC DO214AA 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500 包裝:散裝 零件狀態(tài):在售 類(lèi)型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關(guān)態(tài)（典型值）:8V 電壓 - 擊穿（最小值）:8.89V 電壓 - 箝位（最大值）@ Ipp:13.4V 電流 - 峰值脈沖（10/1000μs）:36A 功率 - 峰值脈沖:500W 電源線路保護(hù):無(wú) 應(yīng)用:通用 不同頻率時(shí)的電容:30pF @ 1MHz 工作溫度:-65°C ~ 150°C（TJ） 安裝類(lèi)型:表面貼裝 封裝/外殼:DO-214AA，SMB 供應(yīng)商器件封裝:SMBJ（DO-214AA） 標(biāo)準(zhǔn)包裝:1 |
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