參數(shù)資料
型號: MXLSMBJSAC10
廠商: MICROSEMI CORP-LAWRENCE
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/4頁
文件大?。?/td> 525K
代理商: MXLSMBJSAC10
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01021 Rev A, October 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MSMBJSAC5.0 thru MSMBJSAC75, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional up screening available by replacing the M prefix with MA, MX or MXL.
These
prefixes specify various screening and conformance inspection options based on
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options
Low capacitance performance of 30pF
Suppresses transients up to 500 W Peak Pulse Power @ 10/1000
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices ava
ilable by adding an “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines per select waveforms in RTCA/DO-160F (see
MicroNote 130 for Waveform 4 and 5A capability) & ARINC 429 with bit rates of 100 kb/s (per
ARINC 429, Part 1, par. 2.4.1.1)
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MSMBJSAC5.0 to MSMBJSAC75
o
Class 2: MSMBJSAC5.0 to MSMBJSAC45
o
Class 3: MSMBJSAC5.0 to MSMBJSAC22
o
Class 4: MSMBJSAC5.0 to MSMBJSAC10
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance
o
Class 1: MSMBJSAC5.0 to MSMBJSAC26
o
Class 2: MSMBJSAC5.0 to MSMBJSAC15
o
Class 3: MSMBJSAC5.0 to MSMBJSAC7.0
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 C: 5
00 watts at 10/1000 μs with impulse repetition rate
(duty factor) of 0.01 % or less*
tclamping (0 volts to VBR min.): < 5 ns theoretical for unidirectional
Operating and Storage temperature: -65 °C to +150 °C
Steady-State Power dissipation*: 2.5 watts at TL = +75 C
Solder temperatures: 260 C for 10 s (maximum)
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff
voltage) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the
TVS element.
Also see Figures 5 and 6 for further protection details in rated peak pulse power for
unidirectional and bidirectional configurations respectively.
DO-214AA
SURFACE MOUNT
500 Watt Low Capacitance
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional construction
- Available J-bend termination
- Selections for 5.0 to 75 V standoff voltages (VWM)
相關(guān)PDF資料
PDF描述
MSP6102AUS BIDIRECTIONAL, SILICON, TVS DIODE
MA30KP130TR 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
MA30KP36TR 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
MA30KP45C 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE
MA30KP51 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MXLSMBJSAC12 功能描述:TVS DIODE 12VWM 19VC DO214AA 制造商:microsemi ire division 系列:軍用,MIL-PRF-19500 包裝:散裝 零件狀態(tài):在售 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關(guān)態(tài)(典型值):12V 電壓 - 擊穿(最小值):13.3V 電壓 - 箝位(最大值)@ Ipp:19V 電流 - 峰值脈沖(10/1000μs):25A 功率 - 峰值脈沖:500W 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時的電容:30pF @ 1MHz 工作溫度:-65°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:DO-214AA,SMB 供應(yīng)商器件封裝:SMBJ(DO-214AA) 標(biāo)準(zhǔn)包裝:1
MXLSMBJSAC12E3 制造商:Microsemi Corporation 功能描述:TVS DIODE 12VWM 19VC DO214AA 制造商:Microsemi Corporation 功能描述:TVS 500W UNIDIRECT DO-214AA
MXLSMBJSAC15 制造商:Microsemi Corporation 功能描述:TVS DIODE 15VWM 23.6VC DO214AA
MXLSMBJSAC15E3 功能描述:TVS DIODE 15VWM 23.6VC DO214AA 制造商:microsemi ire division 系列:軍用,MIL-PRF-19500 包裝:散裝 零件狀態(tài):在售 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關(guān)態(tài)(典型值):15V 電壓 - 擊穿(最小值):16.7V 電壓 - 箝位(最大值)@ Ipp:23.6V 電流 - 峰值脈沖(10/1000μs):20A 功率 - 峰值脈沖:500W 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時的電容:30pF @ 1MHz 工作溫度:-65°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:DO-214AA,SMB 供應(yīng)商器件封裝:SMBJ(DO-214AA) 標(biāo)準(zhǔn)包裝:1
MXLSMBJSAC18 功能描述:TVS DIODE 18VWM 28.8VC DO214AA 制造商:microsemi ire division 系列:軍用,MIL-PRF-19500 包裝:散裝 零件狀態(tài):在售 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關(guān)態(tài)(典型值):18V 電壓 - 擊穿(最小值):20V 電壓 - 箝位(最大值)@ Ipp:28.8V 電流 - 峰值脈沖(10/1000μs):15A 功率 - 峰值脈沖:500W 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時的電容:30pF @ 1MHz 工作溫度:-65°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:DO-214AA,SMB 供應(yīng)商器件封裝:SMBJ(DO-214AA) 標(biāo)準(zhǔn)包裝:1