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參數(shù)資料
| 型號： | MXD1210EWE+T |
| 廠商： | Maxim Integrated |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC CNTRLR NVRAM 16-SOIC |
| 產(chǎn)品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 1,000 |
| 控制器類型： | 非易失性 RAM |
| 電源電壓： | 4.75 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 16-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC W |
| 包裝： | 帶卷 (TR) |
MXD1210
Nonvolatile RAM Controller
_______________________________________________________________________________________
3
Note 1: Only one battery input is required. Unused battery inputs must be grounded.
Note 2: ICCO1 is the maximum average load current the MXD1210 can supply to the memories.
Note 3: ICCO2 is the maximum average load current the MXD1210 can supply to the memories in battery-backup mode.
Note 4:
CEO can sustain leakage current only in battery-backup mode.
Note 5: Guaranteed by design.
Note 6: tCE max must be met to ensure data integrity on power loss.
ELECTRICAL CHARACTERISTICS—Battery-Backup Mode
(VCCI < VBATT, positive edge rate at VBATT1, VBATT2 > 0.1V/s, TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MXD1210C/E
2
100
nA
Quiescent Current (Note 1)
IBATT
VCCO, CEO open,
VCCI = 0V
MXD1210M
5
A
Output Supply Current
ICCO2
VBATT - VCCO
≤ 0.2V (Notes 3, 4)
300
A
CEO Output Voltage
VO
Output open
VBATT -
0.2
V
CAPACITANCE
(TA = TMIN to TMAX, unless otherwise noted.) (Note 5)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Capacitance
CIN
5pF
Output Capacitance
COUT
7pF
VCC POWER TIMING CHARACTERISTICS
(VCCI = +4.75V to +5.5V, TOL = GND; or VCCI = +4.5V to +5.5V, TOL = VCCO, TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MXD1210C
5
10
20
MXD1210E
5
10
22
CE Propagation Delay
tPD
RL = 1k
Ω, CL = 50pF
MXD1210M
5
10
25
ns
CE High to Power-Fail
tPF
(Note 5)
0
ns
TIMING CHARACTERISTICS
(VCCI
< +4.75V to +5.5V, TOL = GND; or VCCI < +4.5V, TOL = VCCO, TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Recovery at Power-Up
tREC
25
20
ms
tF
To out-of-tolerance condition
300
VCC Slew-Rate Power-Down
tFB
Tolerance to battery power
10
s
VCC Slew-Rate Power-Up
tR
0s
CE Pulse Width
tCE
(Note 6)
1.5
s
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| MXD1210MJA | 功能描述:監(jiān)控電路 RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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