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參數(shù)資料
| 型號： | MX66C256MC-70 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | Very Low Power 32k x 8 CMOS SRAM |
| 中文描述： | 32K的非常低功耗的CMOS的SRAM × 8 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 183K |
| 代理商： | MX66C256MC-70 |
MX66C256
Rev. 1.1, Jan., 2000
P/N DS0035
1
Macronix America Inc. USA 1338 Ridder Park Dr., San Jose, CA 95131
Tel (408)453-8088 Fax (408)451-0876 www.macronix.com
Very Low Power 32k x 8 CMOS SRAM
PIN CONFIGURATIONS
Address
Input
Buffer
Row
Decoder
Memory Array
512 x 512
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Address Input Buffer
A3 A2 A1 A0 A10
Data
Control
Gnd
Vdd
OE
WE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A12
A14
A13
A11
A9
A8
A7
A6
A5
8
8
8
8
12
64
512
BLOCK DIAGRAM
512
18
A4
FEATURES
Vcc operation voltage : 5.0V
Very low power consumption :
50 mA (Max.) write current
40 mA (Max.) read current
0.4uA (Typ.) CMOS standby current
High speed access time :
- 70 70ns (Max.)
- 100
100ns (Max.)
Input levels are CMOS-compatible
Automatic power down when chip is deselected
Three state outputs
Fully static operation
Data retention supply voltage as low as 2.0V
Easy expansion with CE and OE options
The MX66C256 is a high performance, very low power
CMOS Static Random Access Memory organized as
32,768 words by 8 bits and operates at 5.0V supply
voltage.
Advanced CMOS technology and circuit techniques
provide both high speed and low power features with a
typical CMOS standby current of 0.4uA and maximum
access time of 70ns and 100 ns in 5V operation.
Easy memory expansion is provided by an active LOW
chip enable(CE), and active LOW output enable (OE)
and three-state output drivers.
The MX66C256 has an automatic power down feature,
reducing the power consumption significantly when chip
is deselected.
The MX66C256 is available in the JEDEC standard 28
pin 330mil Plastic SOP, and 8mmx13.4mm TSOP
(normal type).
DESCRIPTION
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
28-TSOP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
28-SOP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX66C256TC-70 | Very Low Power 32k x 8 CMOS SRAM |
| MX7537JN | CMOS Parallel Loading Dual 12-Bit Multiplying D/A Converters |
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| MX7547JN | ENERGIZER LITHIUM BATTERY, FEATURES: HIGH ENERGY, LONG LIFE POWER SOURCE, GOOD LOW AND HIGH TEMPERATURE OPERATIONS, RECOMMENDED FOR CALCULATORS, CAMERAS, MEMORY BACK-UP, PAGERS AND WATCHES RoHS Compliant: NA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX66C256MI-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:Very Low Power 32k x 8 CMOS SRAM |
| MX66C256MI-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:Very Low Power 32k x 8 CMOS SRAM |
| MX66C256TC-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:Very Low Power 32k x 8 CMOS SRAM |
| MX66C256TC-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:Very Low Power 32k x 8 CMOS SRAM |
| MX66C256TI-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:Very Low Power 32k x 8 CMOS SRAM |
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