參數(shù)資料
型號(hào)： MX29LV800BTMI-70
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類(lèi)： DRAM
英文描述： 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
封裝： 0.500 INCH, PLASTIC, MO-175, SOP-44
文件頁(yè)數(shù)： 8/63頁(yè)
文件大小： 765K
代理商： MX29LV800BTMI-70
8
P/N:PM1062
MX29LV800BT/BB
REV. 1.3, DEC. 20, 2004
QUERY COMMAND AND COMMON FLASH
INTERFACE (CFI) MODE ( for MX29LV800BT/
BB)
MX29LV800BT/BB is capable of operating in the CFI
mode. This mode all the host system to determine the
manufacturer of the device such as operating param-
eters and configuration. Two commands are required in
CFI mode. Query command of CFI mode is placed first,
then the Reset command exits CFI mode. These are
described in Table 6.
The single cycle Query command is valid only when the
device is in the Read mode, including Erase Suspend,
Standby mode, and Read ID mode; however, it is ig-
nored otherwise.
The Reset command exits from the CFI mode to the
Read mode, or Erase Suspend mode, or read ID mode.
The command is valid only when the device is in the
CFI mode.
TABLE 4-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal)
Description
Address
(Byte Mode)
20
22
24
26
28
2A
2C
2E
30
32
34
Address
(Word Mode)
10
11
12
13
14
15
16
17
18
19
1A
Data
Query-unique ASCII string "QRY"
0051
0052
0059
0002
0000
0040
0000
0000
0000
0000
0000
Primary vendor command set and control interface ID code
Address for primary algorithm extended query table
Alternate vendor command set and control interface ID code (none)
Address for secondary algorithm extended query table (none)
TABLE 4-2. CFI Mode: System Interface Data Values
(All values in these tables are in hexadecimal)
Description
Address
(Byte Mode)
36
38
3A
3C
3E
40
42
44
46
48
4A
4C
Address
(Word Mode)
1B
1C
1D
1E
1F
20
21
22
23
24
25
26
Data
VCC supply, minimum (2.7V)
VCC supply, maximum (3.6V)
VPP supply, minimum (none)
VPP supply, maximum (none)
Typical timeout for single word/byte write (2
N
us)
Typical timeout for Minimum size buffer write (2
N
us)
Typical timeout for individual block erase (2
N
ms)
Typical timeout for full chip erase (2
N
ms)
Maximum timeout for single word/byte write times (2
N
X Typ)
Maximum timeout for buffer write times (2
N
X Typ)
Maximum timeout for individual block erase times (2
N
X Typ)
Maximum timeout for full chip erase times (not supported)
0027
0036
0000
0000
0004
0000
000A
0000
0005
0000
0004
0000
相關(guān)PDF資料
PDF描述
MX29LV800BTXEI-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29LV800CBMC-70G 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 70NS 44SOP 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 8 Mb (1 M x 8 / 512 K x 16) 70 ns Parallel Flash - SOP-44
MX29LV800CBMC-90G 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 90NS 44SOP
MX29LV800CBMI-70G 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 70NS 44SOP
MX29LV800CBTC-70G 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 70NS 48TSOP 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 8 Mb (1M x 8/512k x 16) 90 ns Parallel Flash - TSOP-48
MX29LV800CBTC-90G 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 90NS 48TSOP 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 8 Mb (1M x 8/512k x 16) 90 ns Parallel Flash - TSOP-48
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