參數(shù)資料
型號: MX29LV017ATI-90
廠商: Electronic Theatre Controls, Inc.
英文描述: 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
中文描述: 1,600位[2Mx8] CMOS單電壓
文件頁數(shù): 15/57頁
文件大小: 641K
代理商: MX29LV017ATI-90
15
P/N:PM0901
MX29LV017A
REV. 1.0, NOV. 22, 2002
WRITE OPERATION STATUS
The device provides several bits to determine the sta-
tus of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/
BY. Table 7 and the following subsections describe the
functions of these bits. Q7, RY/BY, and Q6 each offer a
method for determining whether a program or erase op-
eration is complete or in progress. These three bits are
discussed first.
Q7: Data Polling
The Data Polling bit, Q7, indicates to the host system
whether an Automatic Algorithm is in progress or com-
pleted, or whether the device is in Erase Suspend. Data
Polling is valid after the rising edge of the final WE pulse
in the program or erase command sequence.
During the Automatic Program algorithm, the device out-
puts on Q7 the complement of the datum programmed
to Q7. This Q7 status also applies to programming dur-
ing Erase Suspend. When the Automatic Program algo-
rithm is complete, the device outputs the datum pro-
grammed to Q7. The system must provide the program
address to read valid status information on Q7. If a pro-
gram address falls within a protected sector, Data Poll-
ing on Q7 is active for approximately 1 us, then the de-
vice returns to reading array data.
During the Automatic Erase algorithm, Data Polling pro-
duces a "0" on Q7. When the Automatic Erase algo-
rithm is complete, or if the device enters the Erase Sus-
pend mode, Data Polling produces a "1" on Q7. This is
analogous to the complement/true datum out-put de-
scribed for the Automatic Program algorithm: the erase
function changes all the bits in a sector to "1" prior to
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming
operation. The Byte Program command sequence should
be re-initiated once the device has reset to reading array
data, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the
operation and set Q5 to "1" ,” or cause the Data Polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still "0". Only erase operations can convert a "0" to a
"1".
this, the device outputs the "complement,” or "0".” The
system must provide an address within any of the sec-
tors selected for erasure to read valid status information
on Q7.
After an erase command sequence is written, if all sec-
tors selected for erasing are protected, Data Polling on
Q7 is active for approximately 100 us, then the device
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
on the following read cycles. This is because Q7 may
change asynchronously with Q0-Q6 while Output En-
able (OE) is asserted low.
RY/BY:Ready/Busy
The RY/BY is a dedicated, open-drain output pin that
indicates whether an Automatic Erase/Program algorithm
is in progress or complete. The RY/BY status is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence. Since RY/BY
is an open-drain output, several RY/BY pins can be tied
together in parallel with a pull-up resistor to Vcc.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the de-
vice is ready to read array data (including during the
Erase Suspend mode), or is in the standby mode.
Table 7 shows the outputs for RY/BY during write opera-
tion.
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Pro-
gram or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence (prior to the
program or erase operation), and during the sector time-
out.
相關(guān)PDF資料
PDF描述
MX29LV017AXBC-70 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
MX29LV017AXBC-90 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
MX29LV017AXBI-70 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
MX29LV017AXBI-90 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
MX29LV017AXEC-70 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29LV040CQC-55Q 制造商:Macronix International Co Ltd 功能描述:4M (512K X8) 70NS 32PLCC
MX29LV040CQC-70G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 70 ns Parallel Flash - PLCC-32
MX29LV040CQC-90G 制造商:MISCELLANEOUS 功能描述: 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 90NS 32PLCC 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 90 ns Parallel Flash - PLCC-32
MX29LV040CQI-55Q 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 55NS 32PLCC 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 55 ns Parallel Flash - PLCC-32
MX29LV040CQI-70G 功能描述:IC FLASH PAR 3V 4MB 70NS 32PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G(256M x 16) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6