參數(shù)資料
型號(hào): MWT-H16-3
廠商: MICROWAVE TECHNOLOGY INC
元件分類(lèi): 小信號(hào)晶體管
英文描述: KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: DIE-15
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 133K
代理商: MWT-H16-3
75
°°°°°C or Lower
100
125
75
°°°°°C or Lower
100
125
150
0
2
4
6
8
500
400
300
200
100
0
Vds (V)
Ids
(mA)
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MwT-H16
DUAL BIAS
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
18 Mils Long
2 Mils
MwT
FPH16
2 Mils
MwT-H16
OPTIONAL SINGLE BIAS WITH CAPS
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Bonding Configuration used to Obtain “S” Data
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
12 Mils Long
13 Mils Long
2 Mils
MwT
FPH16
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of Microstrip
Gold Blocks
10x10x5 for
Dual Bias, or
25 pF Caps
for Single
Bias (2 each)
MwT-H16
OPTIONAL BONDING
Gold Ridge
5x33x5 Mils
(2 each)
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
12 Mils Long
13 Mils Long
MwT
FPH16
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level
of Microstrip
25 pF Caps
10x33x5 Mils
(2 each)
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-H16
32 GHz High Power
AlGaAs/InGaAs PHEMT
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
Absolute Maximum Continuous Maximum
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°°°°°C
240
+175
360
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MAXIMUM RATINGS AT Ta = 25
°°°°°C
IDSS
(mA)
BIN#
1
120-
135
BIN SELECTION
2
3
4
5
6
7
8
9
10
11
12
13
14
135-
150
150-
165
165-
180
180-
195
195-
210
210-
225
225-
240
240-
255
255-
270
270-
285
285-
300
300-
315
315-
330
MwT-H16
32 GHz High Power
AlGaAs/InGaAs PHEMT
BIN ACCURACY STATEMENT
相關(guān)PDF資料
PDF描述
MWT-H16-5 KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MWT-H16-8 KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MWT-H16-1 KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MWT-H16-11 KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MWT-H16-10 KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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