參數(shù)資料
型號(hào): MW6S010NR1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistor
中文描述: RF功率場效應(yīng)晶體管
文件頁數(shù): 7/16頁
文件大?。?/td> 542K
代理商: MW6S010NR1
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
8
90
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
10
7
10
6
10
5
120
140
160
180 190
M
2
)
100
200
170
150
130
110
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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