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參數(shù)資料
| 型號(hào)： | MW5IC2030MBR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount |
| 中文描述： | 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, CASE 1329-09, TO-272, WB-16, 16 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 627K |
| 代理商： | MW5IC2030MBR1 |
MW5IC2030MBR1 MW5IC2030GMBR1
8
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
2000
20
1920
27
T
C
= 30 C
f, FREQUENCY (MHz)
Figure 13. Power Gain versus Frequency
Gp
V
DD
= 27 Vdc, P
out
= 5 W (CW)
I
DQ1
= 160 mA, I
DQ2
= 230 mA
TwoTone Measurements, Center Frequency = 1960 MHz
25 C
85 C
26
25
24
23
22
21
1930
1940
1950
1960
1970
1980
1990
100
0
8
1
0
40
P
out
, OUTPUT POWER (WATTS)
Figure 14. EVM and Drain Efficiency versus
Output Power
E
,
η
V
DD
= 27 Vdc
I
DQ1
= 160 mA
I
DQ2
= 230 mA
f = 1960 MHz
25 C
85 C
T
C
= 30 C
Source EVM = 0.60%
6
30
4
20
2
10
10
100
85
45
0
25 C
SR @ 400 kHz
P
out
, OUTPUT POWER (WATTS)
Figure 15. Spectral Regrowth at 400 kHz and 600 kHz
versus Output Power
V
DD
= 27 Vdc
I
DQ1
= 160 mA
I
DQ2
= 230 mA
EDGE Modulation
f = 1960 MHz
SR @ 600 kHz
25 C
85 C
85 C
50
55
60
65
70
75
80
10
T
C
= 30 C
30 C
S
40
80
40
22
ALT2
P
out
, IS95 OUTPUT POWER (dBm)
Figure 16. IS-95 Spectral Regrowth versus
Output Power
V
DD
= 27 Vdc
I
DQ1
= 160 mA, I
DQ2
= 230 mA
f = 1960 MHz, 9Channel IS95 CDMA
ACPR
ALT1
45
50
55
60
65
70
75
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
A
A
100
60
10
0
25 C
P
out
, OUTPUT POWER (WATTS) CW
Figure 17. Insertion Phase versus Output Power
I
T
C
= 30 C
85 C
20
30
40
50
1
10
T
J
, JUNCTION TEMPERATURE (
°
C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
Figure 18. MTTF Factor versus Junction Temperature
190
1.E+09
90
1st Stage
M
2
)
2nd Stage
100
110
120
130
140
150
160
170
180
1.E+08
1.E+07
1.E+06
η
D
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW5IC2030MBR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MW5IC2030MBR5 | 功能描述:IC PWR AMP RF 26V 30W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW5IC2030NBR1 | 功能描述:射頻放大器 1.9GHZ RFIC TO272WBN RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW5IC2030NBR1_065 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MW5IC970GNBR1 | 功能描述:射頻放大器 HV5IC 70W TO272WB16GN RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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