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參數(shù)資料
| 型號： | MW4IC915GMBR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 860 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, CASE 1329A-02, WIDE BODY TO-272, 16 PIN |
| 文件頁數(shù)： | 2/16頁 |
| 文件大小： | 334K |
| 代理商： | MW4IC915GMBR1 |
2
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5. +65
Vdc
Gate
Source Voltage
V
GS
0.5. +15
Vdc
Storage Temperature Range
T
stg
65 to +175
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
GSM Application
(P
out
= 15 W CW)
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
GSM EDGE Application
(P
out
= 7.5 W CW)
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
CDMA Application
(P
out
= 3.75 W CW)
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
R
θ
JC
7.3
1.7
7.3
1.8
7.4
1.9
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22
A113, IPC/JEDEC J
STD
020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DS
= 26 Vdc, I
DQ1
= 90 mA, I
DQ2
= 240 mA, P
out
= 15 W PEP,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two
Tone
Power Gain
G
ps
29
31
—
dB
Power Added Efficiency
PAE
29
31
—
%
Intermodulation Distortion
IMD
—
40
29
dBc
Input Return Loss
IRL
—
15
10
dB
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
AN1955.
(continued)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MW4IC915GNBR1 | 功能描述:射頻放大器 15W 900MHZ 26V RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW4IC915GNBR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC915MBR1 | 功能描述:IC PWR AMP RF 26V 15W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標準包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW4IC915NBR1 | 功能描述:射頻放大器 15W 900MHZ 26V RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW4IC915NBR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
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