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| 型號： | MVUMAF5819 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 306K |
| 代理商： | MVUMAF5819 |
ULTRAMITE SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
SCOTTSD A L E DIVISION
UMAF5817, UMAF5818, and UMAF5819
ENVIRONMENTALLY LEAD-FREE
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DESCRIPTION
APPEARANCE
The UMAF5817 thru UMAF5819 UltraMite series offers a Lead-Free
construction (both internally and externally) in a small efficient surface
mount package with the same electrical features as the popular 1N5817,
1N5818, and 1N5819 Schottky rectifiers. It provides the same size footprint
as other small surface mount DO-214AC or BA package options except
with a much lower profile height. Its configuration in a “2010 MELF” style
robust package design prevents lead damage to terminals and also
minimizes parasitics by eliminating internal wire bonds and providing very
short internal conduction paths.
UltraMite
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Plastic package has Underwriters Laboratory
Flammability classification 94V-0
Metal to silicon rectifier, majority carrier conduction
High current capability, low VF
Built-in stress relief with similar COE as PC boards
Lead-Free construction externally and internally
Optional Lead-Tin finish available (UMA5817-19)
Options for screening in accordance with MIL-PRF-
19500/586 for JAN, JANTX, JANTXV, and JANS
are available by adding MQ, MX, MV, or MSP
prefixes respectively to part numbers. For example,
designate a MXUMAFJ5819 for a JANTX screen.
For surface mount applications
For use in low-voltage high-frequency switching
power supplies, inverters, free wheeling, and
polarity protection applications
Low power loss, High efficiency
Low inductive parasitics for minimal Ldi/dt effects
Fits same small PCB footprints as popular
“SMAJxxx” or “SMBJxxx” Schottky devices in
JEDEC outlines DO-214AC (or BA) and DO-214AA
respectively except with much lower height profile
Robust 2010 MELF style package configuration for
pick-and-place handling
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating junction and storage temperature
range (TJ and TSTG): -50
oC to +125oC
Forward average rectified current (IO)
@TC=75
oC: 1.0 Amp
Forward surge current (IFSM) 8.3 ms single half-
sine waveform superimposed on rated load
(JEDEC Method): 25 Amps
Typical thermal resistance (RθJL): 50
oC/W
Typical junction capacitance (CJ) at 1.0 MHz
and VR of 5.0 Volts: 65 pF for UMAF5817, and
46 pF for UMAF5818 and UMAF5819
Solder temperatures: 260
C for 10 s (maximum)
FRP substrate material and epoxy under-fill
package meeting UL94V-0
Terminals Tin plated (solderable per MIL-STD-750,
Method 2026)
Body marked with F817, F818, or F819
Cathode designated with band
Weight: 0.020 grams
Tape & Reel packaging per EIA-481-2 with 12 mm
tape and 3000 units/reel (7 inch reel) or 10,000
units/reel (13 inch reel)
See package dimensions on last page
ELECTRICAL CHARACTERISTICS @ 25oC unless specified otherwise
Working
Peak
Reverse
Voltage
Maximum
RMS
Voltage;
Maximum
Peak
Repetitive
Voltage;
Maximum
Forward
Voltage at 1.0A
(note 1)
Maximum
Forward
Voltage at 3.0A
(note 1)
Maximum
dc reverse
current @
VRWM
Maximum dc
reverse
current @
VRWM ,100
oC
VRWM
VRMS
VRRM
VF
IR
Part
Number
Volts
mA
UMAF5817 20
14
20
0.45
0.75
0.5
10
UMAF5818 30
21
30
0.55
0.875
0.5
10
UMAF5819 40
28
40
0.60
0.90
0.5
10
NOTES: (1) Pulse test with PW=300 sec, 1% duty cycle.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2002
9-16-03 REV A
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