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參數(shù)資料
| 型號： | MV2101 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diodes |
| 中文描述： | HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-92 |
| 封裝： | PLASTIC, CASE 182-06, TO-226AC, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MV2101 |
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
http://onsemi.com
2
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
MMBV2103LT1
LV2205/MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1
LV2209MMBV2109LT1/MV2109
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1,
are also available in bulk. Use the device title and
drop the ”T1” suffix when ordering any of these devices in bulk.
6.1
9.0
13.5
19.8
24.3
29.7
6.8
10
15
22
27
33
7.5
11
16.5
24.2
29.7
36.3
450
400
400
350
300
200
2.5
2.5
2.5
2.5
2.5
2.5
2.7
2.9
2.9
2.9
3.0
3.0
3.2
3.2
3.2
3.2
3.2
3.2
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
2 fC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
1/16”.
Q
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0
MHz, TA = –65
°
C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA
= +85
°
C in the following equation, which defines TCC:
85
°
C) – CT(–65
°
C)
85
65
TCC
CT(
·
106
CT(25
°
C)
Accuracy limited by measurement of CT to
±
0.1 pF.
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PDF描述 |
|---|---|
| MV2105 | Silicon Tuning Diodes |
| MV2109 | Silicon Tuning Diodes |
| MV2101 | Silicon Tuning Diode |
| MV2109 | Silicon Tuning Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MV21010 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GaAs Varactor Diodes Abrupt Junction |
| MV2101G | 功能描述:DIODE TUNING 30V 6.8PF TO92-2 RoHS:是 類別:分離式半導體產(chǎn)品 >> 可變電容二極管（可變電容二極管，變?nèi)荻O管） 系列:- 產(chǎn)品變化通告:Product Discontinuation 08/Dec/2009 標準包裝:3,000 系列:- 電容@ Vr, F:13.5pF @ 4.5V，1MHz 電容比:5.41 電容比條件:C1/C4.5 電壓 - 峰值反向(最大):12V 二極管類型:單一 在 Vr、F 時的 Q 值:- 安裝類型:表面貼裝 封裝/外殼:SC-79，SOD-523 供應(yīng)商設(shè)備封裝:PG-SC79-2 包裝:帶卷 (TR) 其它名稱:SP000013483 |
| MV2104 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Tuning Diode |
| MV2105 | 功能描述:變?nèi)荻O管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MV2105G | 功能描述:變?nèi)荻O管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
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