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參數(shù)資料
| 型號： | MURS140 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 68K |
| 代理商： | MURS140 |
MURS140 thru MURS160
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
Marking : U1GB , U1JB
SMB
All Dimensions in millimeter
SMB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
4.06
4.57
3.94
3.30
1.96
2.21
0.31
0.15
5.21
5.59
0.05
0.20
2.01
2.50
0.76
1.52
C
B
A
H
E
F
G
D
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =150 C
@TJ =25 C
1.0
35
1.25
5.0
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 3)
R0JL
15
C/W
CJ
Typical Junction Capacitance Note 2)
10
pF
uA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
@TL =135 C
600
420
600
MURS160
400
280
400
MURS140
Maximum Reverse Recovery Time (Note 1)
TRR
50
ns
NOTES : 1. Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance junction to Lead.
SURFACE MOUNT
SUPER FAST RECTIFIERS
REVERSE VOLTAGE - 400 to 200 Volts
FORWARD CURRENT - 1.0 Ampere
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 1, Apr-2010, KSGB08
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PDF描述 |
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| MURS320-E3/59T | 4 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MURS320 | 3 A, 200 V, SILICON, RECTIFIER DIODE |
| MV1644 | UHF BAND, 56 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-204AA |
| MV1642 | UHF BAND, 47 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-204AA |
| MV209RLRM | VHF BAND, 29 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS140/2T | 功能描述:整流器 400 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS140/52T | 功能描述:整流器 1.0 Amp 400V 25ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS140/55T | 功能描述:整流器 400 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS140/5BT | 功能描述:整流器 400 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS140/5T | 功能描述:整流器 400 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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