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參數(shù)資料
| 型號： | MURS120T3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Surface Mount Ultrafast Power Rectifiers |
| 中文描述： | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MURS120T3G |
3
Rectifier Device Data
Figure 6. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.3
0.9
0.5
1.3
3.0
0.01
0.03
0.02
0.2
0.1
10
2.0
0.7
1.1
0.3
0.05
0.5
5.0
i
F
1.5
2.3
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Reverse Current*
0
100
300
400
40
20
8.0
80
0.008
0.004
0.8
0.4
0.2
0.08
0.04
0.02
4.0
2.0
TJ = 175
°
C
IR
200
700
TC, CASE TEMPERATURE (
°
C)
Figure 9. Current Derating, Case
0
20
1.0
2.0
3.0
4.0
5.0
I
0
6.0
7.0
8.0
9.0
10
40
60
80
100
120
140
160
180
200
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Capacitance
0
12
8.0
0
5.0
10
25
15
C
4.0
40
0
0.5
1.0
2.0
3.0
4.0
5.0
0
1.0
1.5
2.0
2.5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 10. Power Dissipation
P
0.7
0.07
1.0
7.0
1.7
1.9
2.1
100
°
C
TC = 25
°
C
175
°
C
600
500
,
TJ = 100
°
C
TJ = 25
°
C
24
20
16
36
32
28
20
NOTE: TYPICAL
CAPACITANCE AT
0 V = 24 pF
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied VR is sufficiently
below rated VR.
RATED VOLTAGE APPLIED
RJC = 13
°
C/W
TJ = 175
°
C
,
SQUARE WAVE
dc
,
TJ = 175
°
C
dc
SQUARE WAVE
10
5.0
400
200
(CAPACITANCE LOAD)
I
PK
I
AV
20
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|---|---|
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| MURS120TRPBF | 制造商:International Rectifier 功能描述:DIODE ULTRA-FAST 1A 200V |
| MURS130 | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A |
| MURS140 | 制造商:World Products 功能描述: |
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