參數(shù)資料
型號： MURD620CTTRLPBF
廠商： VISHAY INTERTECHNOLOGY INC
元件分類： 參考電壓二極管
英文描述： 3 A, 200 V, SILICON, RECTIFIER DIODE
封裝： ROHS COMPLIANT, DPAK-3
文件頁數(shù)： 1/7頁
文件大小： 95K
代理商： MURD620CTTRLPBF
Document Number: 94084
For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 01-Jul-09
1
Ultrafast Rectifier,
2 x 3 A FRED PtTM
MURD620CTPbF
Vishay High Power Products
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
DESCRIPTION/APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control,
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
trr
25 ns
IF(AV)
2 x 3 A
VR
200 V
Base
common
cathode
Common
cathode
2
4
13
Anode
D-PAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Peak repetitive reverse voltage
VRRM
200
V
Average rectified forward current per device
IF(AV)
Total device, rated VR, TC = 146 °C
6
A
Non-repetitive peak surge current
IFSM
50
Peak repetitive forward current per diode
IFM
Rated VR, square wave, 20 kHz, TC = 146 °C
6
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 A
200
-
V
Forward voltage
VF
IF = 3 A
-
1.0
IF = 3 A, TJ = 125 °C
-
0.96
IF = 6 A
-
1.2
IF = 6 A, TJ = 125 °C
-
1.13
Reverse leakage current
IR
VR = VR rated
-
5
A
TJ = 125 °C, VR = VR rated
-
250
Junction capacitance
CT
VR = 200 V
-
12
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
相關(guān)PDF資料
PDF描述
MA4P404-134 SILICON, PIN DIODE
MLL4729AURE3 3.6 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
MLL4730CURTR 3.9 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
MLL4739DURE3TR 9.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
MLL4741AURE3 11 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MURD620CTTRPBF 功能描述:整流器 200 Volt 6.0 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MURD620CTTRR 功能描述:整流器 200 Volt 6.0 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MURD620CTTRRPBF 功能描述:整流器 200 Volt 6.0 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MURF10005 功能描述:整流器 SI S-FST RECOV TO244 50-600V 100A 50P/35R RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MURF10005R 功能描述:整流器 SI S-FST RECOV TO244 50-600V 100A 50P/35R RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*