參數資料
型號: MURC240
廠商: SENSITRON SEMICONDUCTOR
元件分類: 整流器
英文描述: 2 A, SILICON, RECTIFIER DIODE
封裝: DIE-2
文件頁數: 1/4頁
文件大?。?/td> 214K
代理商: MURC240
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MURC240
Technical Data
Data Sheet 4854, Rev.-
MURC240
Ultrafast Silicon Die
Applications:
Switching Power Supply General Purpose Free-Wheeling Diodes Polarity Protection
Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
400
V
Max. Average Forward
IF(AV)
50% duty cycle @TC =85°C,
rectangular wave form
2.0
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine pulse
35
A
Max. Junction Temperature
TJ
-
-65 to +175
°C
Max. Storage Temperature
Tstg
-
-65 to +175
°C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop *
VF
@ 2.0A, Pulse, TJ = 150 °C
@ 2.0A, Pulse, TJ = 25 °C
1.05
1.30
V
Max. Reverse Current *
IR1
@VR = rated VR
TJ = 25 °C
5.0
A
IR2
@VR = VR
TJ = 150 °C
150
A
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz, VSIG = 50mV (p-p)
15
pF
Max Reverse Recovery Time
trr
IF =1.0Amp,di/dt = 50Amp/s
IF= 0.5 Amp, IR= 1.0 Amp,
IREC= 0.25 Amp
65
50
nS
Max Forward Recovery Time
Tfr
IF =1.0Amp,di/dt = 50Amp/s
50
nS
* Pulse Width < 300s, Duty Cycle <2%
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