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參數(shù)資料
| 型號： | MUR3060PT |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-218AC |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 62K |
| 代理商： | MUR3060PT |
2002 Fairchild Semiconductor Corporation
MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC Rev. B
Electrical Specifications
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MUR3040PT, RURH1540CC
MUR3060PT, RURH1560CC
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 15A
-
-
1.25
-
-
1.5
V
I
F
= 15A, T
C
= 150
o
C
-
-
1.12
-
-
1.2
V
I
R
V
R
= 400V
-
-
100
-
-
-
μ
A
V
R
= 600V
-
-
-
-
-
100
μ
A
V
R
= 400V, T
C
= 150
o
C
-
-
500
-
-
-
μ
A
V
R
= 600V, T
C
= 150
o
C
-
-
-
-
-
500
μ
A
t
rr
I
F
= 1A, dI
F
/dt = 100A/
μ
s
-
-
55
-
-
55
ns
I
F
= 15A, dI
F
/dt = 100A/
μ
s
-
-
60
-
-
60
ns
t
a
I
F
= 15A, dI
F
/dt = 100A/
μ
s
-
30
-
-
30
-
ns
t
b
I
F
= 15A, dI
F
/dt = 100A/
μ
s
-
17
-
-
20
-
ns
R
θ
JC
-
-
1.5
-
-
1.5
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time at dI
t
a
= Time to reach peak reverse current at dI
t
b
= Time from peak I
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
μ
s, D = 2%).
F
/dt = 100A/
μ
s (See Figure 6), summation of t
/dt = 100A/
μ
s (See Figure 6).
based on a straight line from peak I
a
+ t
b
.
F
RM
to projected zero crossing of I
RM
RM
through 25% of I
RM
(See Figure 6).
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
80
10
1
0
I
F
,
V
F
, FORWARD VOLTAGE (V)
0.5
1.0
1.5
2.0
175
o
C
100
o
C
25
o
C
500
100
10
1.0
0.01
0.001
0
I
R
,
μ
A
100
200
V
R
, REVERSE VOLTAGE (V)
300
400
500
600
0.1
175
o
C
100
o
C
25
o
C
MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUR410 | 4 A, 100 V, SILICON, RECTIFIER DIODE |
| MUR415 | 4 A, 150 V, SILICON, RECTIFIER DIODE |
| MUR440 | 4 A, 400 V, SILICON, RECTIFIER DIODE |
| MUR450 | 4 A, 500 V, SILICON, RECTIFIER DIODE |
| MUR430 | 4 A, 300 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUR3060PTG | 功能描述:整流器 600V 30A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR3060WT | 功能描述:整流器 600V 30A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR3060WTG | 功能描述:整流器 600V 30A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR3060WTG | 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE 30A 600V TO-247 |
| MUR3080 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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