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參數(shù)資料
| 型號(hào)： | MUR180E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifiers |
| 中文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 82K |
| 代理商： | MUR180E |
MUR180E, MUR1100E
http://onsemi.com
4
MERCURY
SWITCH
V
D
I
D
DUT
40 mH COIL
+V
DD
I
L
S
1
BV
DUT
I
L
I
D
V
DD
t
0
t
1
t
2
t
Figure 6. Test Circuit
Figure 7. Current–Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S
1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t
1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
DUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t
2
.
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
DD
power supply while the diode is in
breakdown (from t
1
to t
2
) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
DD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
1
was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR1100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 volts, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
WAVAL
1
2LI2
LPK
BVDUT
BVDUT–VDD
WAVAL
1
2LI2
LPK
Figure 8. Current–Voltage Waveforms
CHANNEL 2:
I
L
0.5 AMPS/DIV.
CHANNEL 1:
V
DUT
500 VOLTS/DIV.
TIME BASE:
20 s/DIV.
EQUATION (1):
EQUATION (2):
CH1
CH2
REF
REF
CH1
CH2
ACQUISITIONS
SAVEREF SOURCE
1
217:33 HRS
STACK
A
20 s
953 V
VERT
500V
50mV
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUR2020R | SWITCHMODE Ultrafast Power Rectifier |
| MUR210 | SWITCHMODEE Power Rectifier |
| MUR210RL | SWITCHMODEE Power Rectifier |
| MUR220 | SWITCHMODE Power Rectifier |
| MUR220RL | SWITCHMODE Power Rectifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUR180E/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:SWITCHMODE? Power Rectifiers |
| MUR180E_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:SWITCHMODE Power Rectifiers |
| MUR180EG | 功能描述:整流器 800V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR180EG | 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE 1A 800V AXIAL 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE, 1A, 800V AXIAL |
| MUR180ERL | 功能描述:整流器 800V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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