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參數(shù)資料
| 型號： | MUR1100E |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS |
| 中文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 123K |
| 代理商： | MUR1100E |
1
Rectifier Device Data
Ultrafast “E’’ Series with High Reverse
Energy Capability
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
20 mjoules Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175
°
C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 Volts
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering
Purposes: 220
°
C Max. for 10 Seconds, 1/16
″
from case
Shipped in plastic bags, 1000 per bag
Available Tape and Reeled, 5000 per reel, by adding a “RL’’
suffix to the part number
Polarity: Cathode Indicated by Polarity Band
Marking: U190E, U1100E
MAXIMUM RATINGS
R i
Rating
Symbol
b l
MUR
U i
Unit
190E
1100E
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
900
1000
Volts
Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 1)
IF(AV)
1.0 @ TA = 95
°
C
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
35
Amps
Operating Junction Temperature and Storage Temperature
TJ, Tstg
65 to +175
°
C
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Ambient
R
θ
JA
See Note 1
°
C/W
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
SWITCHMODE is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUR190E/D
SEMICONDUCTOR TECHNICAL DATA
ULTRAFAST
RECTIFIERS
1.0 AMPERE
900–1000 VOLTS
CASE 59–04
MUR1100E is a
Motorola Preferred Device
Rev 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUR1100ERL | SWITCHMODE Power Rectifiers |
| MUR1100E | TIP REPL BEVEL .016 SP200-500 |
| MUR190E | ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS |
| MXR571 | NPN Silicon High Frequency Transisters |
| P-0-K-02 | P-0-K-02 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUR1100EG | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR1100EG | 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE 1A 1KV AXIAL |
| MUR1100ERL | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR1100ERLG | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR1100-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:1A ULTRA FAST EFFICIENT RECTIFIER |
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