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參數(shù)資料
| 型號： | MUR1010CT |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | TIP REPL SLOT SMD SOT-23 MX SER |
| 中文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 103K |
| 代理商： | MUR1010CT |
MUR1010CT
THRU
MUR1020CT
10 Amp Super Fast
Gl ass Passivated
Rectifier
100 to 200 Volts
Features
Glass passivated chip
Superfast switching time for hight efficiency
Low reverse leakage current
High surge capacity
Maximum Ratings
Operating Junction Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +150
°
C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
MUR1010CT MUR1010CT 100V
MUR1020CT MUR1020CT 200V
70V 100V
140V
200V
M C C
TO-220AB
F --- .250 --- 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
2
1
3
www.
mc c semi
.c om
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
V
F
I
F(AV)
10 A
T
C
= 125
°
C
I
FSM
55 A
8.3ms, half sine
0.975V
0.925
V
1.25
V
1.20
V
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
I
R
50uA
50
0
uA
T
J
= 25
°
C
T
J
= 100
°
C
*Pulse Test: Pulse Width 300
μ
sec, Duty Cycle 2%
C
J
80
pF
Measured at
1.0MHz, V
R
=4.0V
Typical Junction
Capacitance
35ns
T
rr
T
J
= 25
°
C I
F
= 5A
T
J
= 125
°
C
T
J
= 25
°
C I
F
=10A
T
J
= 125
°
C
I
F
=0.5A, I
r
=1.0A,
I
rr
=0.25A
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
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