參數(shù)資料
型號(hào): MUN52xxT1
廠商: Motorola, Inc.
英文描述: NPN SILICON BIAS RESISTOR TRANSISTORS
中文描述: NPN硅偏置電阻晶體管
文件頁數(shù): 4/10頁
文件大?。?/td> 139K
代理商: MUN52XXT1
MUN5211T1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5) (Continued)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k )
MUN5230T1
MUN5215T1
MUN5216T1
MUN5233T1
V
OH
4.9
Vdc
Input Resistor
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5236T1
MUN5237T1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k
Resistor Ratio
MUN5211T1/MUN5212T1/MUN5213T1/
MUN5236T1
MUN5214T1
MUN5215T1/MUN5216T1
MUN5230T1/MUN5231T1/MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5237T1
R
1
/R
2
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
R
JA
= 403
°
C/W
250
P
D
,
300
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