參數資料
型號： MUN5211T1G
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： NPN SILICON BIAS RESISTOR TRANSISTORS
中文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
文件頁數： 1/10頁
文件大?。?/td> 139K
代理商： MUN5211T1G
Semiconductor Components Industries, LLC, 2004
November, 2004
Rev. 6
1
Publication Order Number:
MUN5211T1/D
MUN5211T1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base
emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC
70/SOT
323 package which is designed for low power
surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC
70/SOT
323 package can be soldered using wave or reflow.
The modified gull
winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel.
Pb
Free Packages are Available
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Base Voltage
V
CBO
50
Vdc
Collector
Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
mW/
°
C
Thermal Resistance
Junction
to
Ambient
R
JA
618 (Note 1)
403 (Note 2)
°
C/W
Thermal Resistance
Junction
to
Lead
R
JL
280 (Note 1)
332 (Note 2)
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR
4 @ Minimum Pad.
2. FR
4 @ 1.0 x 1.0 inch Pad.
SC
70/SOT
323
CASE 419
STYLE 3
Preferred
devices are recommended choices for future use
and best overall value.
NPN SILICON
BIAS RESISTOR
TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R
1
R
2
MARKING DIAGRAM
8x
x
M
= Specific Device Code
= (See Marking Table)
= Date Code
8x M
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
相關PDF資料
PDF描述
MUN5212T1G NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5213T1G NPN SILICON BIAS RESISTOR TRANSISTORS
MUN52xxT1 NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5236DW1T1 Dual Bias Resistor Transistors
MUN5235DW1 Dual Bias Resistor Transistors
相關代理商/技術參數
參數描述
MUN5211W 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Dual Bias ResistorTransistors
MUN5212 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor
MUN5212DW 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Dual Bias Resistor Transistor
MUN5212DW1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
MUN5212DW1T1 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
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