參數(shù)資料
型號(hào): MUN5136DW1T1
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Dual Bias Resistor Transistors
中文描述: 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 419B-02, SC-70, SC-88, 6 PIN
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 280K
代理商: MUN5136DW1T1
LESHAN RADIO COMPANY, LTD.
MUN5111dw–3/11
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,) (Continued)
Characteristic
ON CHARACTERISTICS
(Note 5.)
DC Current Gain
MUN5111DW1T1
(V
CE
= –10 V, I
C
= –5.0 mA)
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5135DW1T1
MUN5135DW1T1
Output Voltage (on)
(V
CC
= –5.0 V, V
B
= –2.5 V, R
L
= 1.0 k
)
MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5113DW1T1
MUN5136DW1T1
MUN5137DW1T1
(V
CC
= –5.0 V, V
B
= –4.0 V, R
L
= 1.0 k
)
Output Voltage (off)
(V
CC
= –5.0 V, V
B
= –0.5 V, R
L
= 1.0 k
)
(V
CC
= –5.0 V, V
B
= –0.05 V, R
L
= 1.0 k
)
MUN5130DW1T1
(V
CC
= –5.0 V, V
B
= –0.25 V, R
L
= 1.0 k
)
MUN5115DW1T1
MUN5116DW1T1
MUN5131DW1T1
MUN5133DW1T1
Symbol
Min
Typ
Max
Unit
MUN5111DW1T1 Series
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
V
OL
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
Vdc
(V
CC
= –5.0 V, V
B
= –3.5 V, R
L
= 1.0 k
)
(V
CC
= –5.0 V, V
B
= –5.5 V, R
L
= 1.0 k
)
V
OH
–4.9
Vdc
相關(guān)PDF資料
PDF描述
MUN5136T1 Bias Resistor Transistor
MUN52xxDW1T1 Dual Bias Resistor Transistors
MUN52xxDW1T1 Dual Bias Resistor Transistors
MUN5211DW1T1 Dual Bias Resistor Transistors
MUN5237DW1T1 Dual Bias Resistor Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MUN5136DW1T1G 制造商:ON Semiconductor 功能描述:SS SC88 BR XSTR PNP 50V - Tape and Reel
MUN5136T1 功能描述:TRANS BRT PNP 100MA 50V SOT-323 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)(最大):100mA 電壓 - 集電極發(fā)射極擊穿(最大):50V 電阻器 - 基極 (R1)(歐):47k 電阻器 - 發(fā)射極 (R2)(歐):47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA,5V Ib、Ic條件下的Vce飽和度(最大):300mV @ 500µA,10mA 電流 - 集電極截止(最大):- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70,SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242
MUN5136T1G 制造商:ON Semiconductor 功能描述:SS SC70 BR XSTR PNP 50V - Tape and Reel
MUN5137 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon
MUN5137DW 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon