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參數(shù)資料
| 型號： | MUN5131DW1T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Bias Resistor Transistors |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-88, 6 PIN |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 156K |
| 代理商： | MUN5131DW1T1G |
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 6
1
Publication Order Number:
MUN5111DW1T1/D
MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor
and a baseemitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1 series, two BRT devices are housed in
the SOT363 package which is ideal for lowpower surface mount
applications where board space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
PbFree Packages are Available
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
V
CEO
I
C
50
Vdc
Collector-Emitter Voltage
50
Vdc
Collector Current
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/
°
C
Thermal Resistance,
Junction-to-Ambient
R
JA
670 (Note 1)
490 (Note 2)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/
°
C
Thermal Resistance,
Junction-to-Ambient
R
JA
493 (Note 1)
325 (Note 2)
°
C/W
Thermal Resistance,
Junction-to-Lead
R
JL
188 (Note 1)
208 (Note 2)
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
Preferred
devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)
(2)
(3)
(4)
(5)
(6)
http://onsemi.com
SOT363
CASE 419B
STYLE 1
MARKING DIAGRAM
1
1
6
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
ORDERING INFORMATION
xx
M
= Device Code (Refer to page 2)
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
xx M
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5131T1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5131T1 WAF | 制造商:ON Semiconductor 功能描述: |
| MUN5131T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5131TIG | 制造商:ON Semiconductor 功能描述: |
| MUN5132 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
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