參數(shù)資料
型號: MUN5130T1G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Bias Resistor Transistor
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
文件頁數(shù): 10/12頁
文件大小: 132K
代理商: MUN5130T1G
MUN5111T1 Series
http://onsemi.com
10
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1
75
°
C
25
°
C
25
°
C
Figure 28. Maximum Collector Voltage versus
Collector Current
Figure 29. DC Current Gain
Figure 30. Output Capacitance
Figure 31. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 32. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
7
6
5
4
3
2
1
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.01
1000
V
C
,
V
h
F
,
1.2
0.6
60
50
40
30
20
10
0
0
C
o
,
0.2
0.4
0.8
1.0
100
6
5
4
3
2
1
0
0.1
1
10
I
C
,
10
9
8
7
100
12
10
8
6
4
2
0
1
10
18
16
14
20
V
i
,
I
C
/I
B
= 10
75
°
C
25
°
C
T
A
= 25
°
C
V
CE
= 10 V
75
°
C
25
°
C
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
75
°
C
25
°
C
T
A
= 25
°
C
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
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