參數(shù)資料
型號(hào): MUN5115T1G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Bias Resistor Transistor
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 132K
代理商: MUN5115T1G
MUN5111T1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k )
MUN5130T1
MUN5115T1
MUN5116T1
MUN5131T1
MUN5132T1
V
OH
4.9
Vdc
Input Resistor
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k
Resistor Ratio
MUN5111T1/MUN5112T1/MUN5113T1/
MUN5136T1
MUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
R
1
/R
2
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
050
0
T
A
, AMBIENT TEMPERATURE (
°
C)
50
100
150
P
R
JA
= 833
°
C/W
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MUN5130T1G Bias Resistor Transistor
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MUN5137T1 DIODE ZENER SINGLE 200mW 24Vz 5mA-Izt 0.0579 0.1uA-Ir 16.8 SOT-323 3K/REEL
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MUN5116 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon
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MUN5116DW1G 制造商:ON Semiconductor 功能描述:
MUN5116DW1T1 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MUN5116DW1T1G 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT Dual PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel