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參數(shù)資料
| 型號(hào)： | MUN22xxT1 |
| 廠商： | Motorola, Inc. |
| 英文描述： | NPN SILICON BIAS RESISTOR TRANSISTOR |
| 中文描述： | NPN硅偏置電阻晶體管 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 263K |
| 代理商： | MUN22XXT1 |
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2212T1
V
I
h
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA= 75
°
C
25
°
C
–25
°
C
100
101
100
75
°
C
25
°
C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001
2
4
6
8
10
TA= –25
°
C
0
IC, COLLECTOR CURRENT (mA)
100
VO = 0.2 V
TA= –25
°
C
75
°
C
10
1
0.1
10
20
30
40
50
25
°
C
Figure 11. Input Voltage versus Output Current
0.001
V
25
°
C
IC/IB = 10
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
0
20
60
80
50
0
10
20
30
40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25
°
C
VO = 5 V
TA= –25
°
C
75
°
C
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