參數(shù)資料
型號： MUN211
廠商： ON SEMICONDUCTOR
英文描述： Bias Resistor Transistor
中文描述： 偏置電阻晶體管
文件頁數(shù)： 3/12頁
文件大?。?/td> 159K
代理商： MUN211
MUN2111T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector
Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter
Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
CBO
I
CEO
I
EBO
100
nAdc
500
nAdc
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.20
mAdc
Collector
Base Breakdown Voltage (I
C
= 10 A, I
E
= 0)
Collector
Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
50
Vdc
50
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
120
60
100
140
140
250
250
5.0
15
27
140
130
150
140
250
Collector
Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
MUN2136T1
MUN2137T1
MUN2131T1
MUN2116T1
MUN2132T1
MUN2134T1
MUN2140T1
(I
C
= 10 mA, I
B
= 5.0 mA)
(I
C
= 10 mA, I
B
= 1.0 mA)
V
CE(sat)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k )
MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2113T1
MUN2140T1
MUN2136T1
MUN2137T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k )
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
相關PDF資料
PDF描述
MUN2112T1 Bias Resistor Transistor
MUN2112T1G Bias Resistor Transistor
MUN2113T1 Bias Resistor Transistor
MUN2113T1G Tools, Tips Soldering; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
MUN2136T1 Bias Resistor Transistor
相關代理商/技術參數(shù)
參數(shù)描述
MUN2111 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon
MUN2111_09 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon
MUN2111RT1 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor
MUN2111T1 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MUN2111T1/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Bias Resistor Transistors
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