參數(shù)資料
型號(hào)： MUN2113T1G
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Tools, Tips Soldering; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
中文描述： 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： LEAD FREE, PLASTIC, CASE 318D-04, SC-59, 3 PIN
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 159K
代理商： MUN2113T1G
MUN2111T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector
Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter
Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
CBO
I
CEO
I
EBO
100
nAdc
500
nAdc
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.20
mAdc
Collector
Base Breakdown Voltage (I
C
= 10 A, I
E
= 0)
Collector
Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
50
Vdc
50
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
120
60
100
140
140
250
250
5.0
15
27
140
130
150
140
250
Collector
Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
MUN2136T1
MUN2137T1
MUN2131T1
MUN2116T1
MUN2132T1
MUN2134T1
MUN2140T1
(I
C
= 10 mA, I
B
= 5.0 mA)
(I
C
= 10 mA, I
B
= 1.0 mA)
V
CE(sat)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k )
MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2113T1
MUN2140T1
MUN2136T1
MUN2137T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k )
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
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MUN5113DW1T1G Dual Bias Resistor Transistors
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