參數(shù)資料
型號: MUN2113T1
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Bias Resistor Transistor
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, CASE 318D-04, SC-59, 3 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 159K
代理商: MUN2113T1
MUN2111T1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Unit
Max
Typ
Min
Symbol
ON CHARACTERISTICS
(Note 4)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k )
MUN2130T1
MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
MUN2140T1
V
OH
4.9
Vdc
Input Resistor
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
k
Resistor Ratio
MUN2111T1/MUN2112T1/MUN2113T1/
MUN2136T1
MUN2114T1
MUN2115T1/MUN2116T1/MUN2140T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
MUN2137T1
R
1
/R
2
0.8
0.17
0.8
0.055
0.38
1.7
1.0
0.21
1.0
0.1
0.47
2.1
1.2
0.25
1.2
0.185
0.56
2.6
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
Figure 1. Derating Curve
350
200
150
100
50
0
50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (5
°
C)
P
D
P
R
JA
= 370
°
C/W
250
300
LOAD
+12 V
Figure 2. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
相關(guān)PDF資料
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