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參數(shù)資料
| 型號： | MUN2111T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Bias Resistor Transistor |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, PLASTIC, CASE 318D-04, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 159K |
| 代理商： | MUN2111T1G |
Semiconductor Components Industries, LLC, 2005
January, 2005
Rev. 14
Publication Order Number:
MUN2111T1/D
1
MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base
emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC
59 package which is designed for low power
surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating
Human Body Model: Class 1
ESD Rating
Machine Model: Class B
The SC
59 package can be soldered using wave or reflow.
The modified gull
winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Pb
Free Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Base Voltage
V
CBO
50
Vdc
Collector
Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
= 25
°
C
Derate above 25
°
C
P
D
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
°
C/W
Thermal Resistance
Junction
to
Ambient
R
JA
540 (Note 1)
370 (Note 2)
°
C/W
Thermal Resistance
Junction
to
Lead
R
JL
264 (Note 1)
287 (Note 2)
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR
4 @ Minimum Pad.
2. FR
4 @ 1.0 x 1.0 inch Pad.
SC
59
CASE 318D
PLASTIC
MARKING DIAGRAM
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
PIN 2
BASE
(INPUT)
R1
R2
2
1
3
6x M
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
*See device marking table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
Preferred
devices are recommended choices for future use
and best overall value.
6x = Specific Device Code*
M = Date Code
http://onsemi.com
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MUN2111T3 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN2111T3G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN2112 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN2112RT1 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MUN2112T1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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