參數(shù)資料
型號： MUBW20-06A6K
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： Converter - Brake - Inverter Module
中文描述： 12 A, 600 V, N-CHANNEL IGBT
封裝： MODULE-25
文件頁數(shù)： 2/4頁
文件大?。?/td> 124K
代理商： MUBW20-06A6K
2004 IXYS All rights reserved
2 - 4
4
Advanced Technical Information
MUBW 20-06A6K
Output Inverter T1 - T6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
600
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
25
17
A
A
RBSOA
V
=
±
15 V; R
= 68
; T
= 125°C
Clamped inductive load; L = 100 μH
I
CM
= 30
V
CEK
≤
V
CES
A
t
(SCSOA)
V
= 600 V; V
GE
=
±
15 V; R
G
= 68
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
85
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 15 A; V
GE
= 15 V; T
VJ
= 25°C
2.0
2.3
2.4
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 0.4 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.6
mA
mA
1.3
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
100
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
30
25
160
50
0.42
0.44
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300 V; V
GE
= 15 V; I
C
= 15 A
800
57
pF
nC
R
thJC
R
thCH
(per IGBT)
1.5 K/W
0.55
K/W
Equivalent Circuits for Simulation
Conduction
D8 - D13
Rectifier Diode (typ. at T
= 125°C)
V
0
= 0.90V; R
0
= 12 m
T1 - T6 / D1 - D6
IGBT (typ. at V
= 15 V; T
= 125°C)
V
0
= 1.00 V; R
0
= 70 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.25 V; R
0
= 13 m
T7 / D7
IGBT (typ. at V
= 15 V; T
= 125°C)
V
0
= 1.40 V; R
0
= 150 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.25 V; R
0
= 26 m
Thermal Response
D8 - D13
Rectifier Diode (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Free Wheeling Diode (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
T7 / D7
IGBT (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Free Wheeling Diode (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Inductive load, T
= 125°C
V
CE
= 300 V; I
C
= 15 A
V
GE
= ±15 V; R
Gon
= 39
; R
Goff
= 22
Output Inverter D1 - D6
Symbol
Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25°C
T
C
= 80°C
36
24
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 15 A; V
GE
= 0 V; T
VJ
= 25°C
2.1
V
V
T
VJ
= 125°C
1.5
I
RM
t
rr
I
F
= 15 A; di
/dt = -400A/μs; T
VJ
= 100°C
V
R
= 300 V; V
GE
= 0 V
14
80
A
ns
R
thJC
R
thCH
(per diode)
1.6 K/W
0.55
K/W
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