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參數(shù)資料
| 型號： | MTY30N50 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| 中文描述： | TMOS是30安培，功率場效應晶體管500伏特的RDS（on）\u003d 0.15歐姆 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 237K |
| 代理商： | MTY30N50 |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
10000
1000
100
10
1
0
200
300
400
500
100
°
C
25
°
C
2.5
2
1.5
1
0.5
0
–50
–25
0
TJ, JUNCTION TEMPERATURE (
°
C)
25
50
75
100
125
150
VGS = 10 V
ID = 15 A
0.17
0.16
0.15
0.14
0.13
0.12
ID, DRAIN CURRENT (AMPS)
15 V
0.35
0.3
0.25
0.2
0.05
0
0
20
40
60
50
30
10
60
0
0
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
6
8
10
12
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
0
TJ = 25
°
C
VGS = 10 V
VDS
≥
10 V
VGS = 10 V
TJ = 100
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
VGS = 0 V
50
40
30
20
60
50
40
30
20
10
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
0
20
40
60
50
30
10
TJ = 125
°
C
10
0.15
0.1
100
6 V
8 V
5 V
4 V
25
°
C
TJ = –55
°
C
100
°
C
25
°
C
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相關代理商/技術參數(shù) |
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