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參數(shù)資料
| 型號(hào)： | MTY25N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM |
| 中文描述： | 25 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | MTY25N60E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
10000
1000
100
10
1
0
200
400
500
600
2.5
2
1.5
1
0.5
0
–50
–25
0
TJ, JUNCTION TEMPERATURE (
°
C)
25
50
75
100
125
150
VGS = 10 V
ID = 12.5 A
0.26
0.24
0.22
0.2
0.18
ID, DRAIN CURRENT (AMPS)
15 V
0.5
0.4
0.3
0.2
0.1
0
0
20
40
50
25
°
C
30
10
50
0
0
2
4
6
8
10
12
14
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VGS = 10 V
VDS
≥
10 V
VGS = 10 V
TJ = 100
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
VGS = 0 V
40
30
20
10
2
2.5
3
3.5
4
4.5
5
5.5
6
0
20
40
50
30
10
TJ = 125
°
C
16
18
50
0
40
30
20
10
100
300
6 V
8 V
5 V
4 V
100
°
C
25
°
C
TJ = –55
°
C
25
°
C
100
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTY300A | 制造商:LIUJING 制造商全稱:LIUJING 功能描述:可控硅、晶閘管 |
| MTY30N50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| MTY30N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTY55N20E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
| MTZ.0S.045.065 | 制造商:LEMO connectors 功能描述: |
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