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參數(shù)資料
| 型號(hào)： | MTY14N100E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
| 中文描述： | 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | MTY14N100E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 0.250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
1000
—
—
1.0
—
—
Vdc
V/
°
C
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.3
9.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 7.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 14 Adc)
(VGS = 10 Vdc, ID = 7.0 Adc, TJ = 125
°
C)
Forward Transconductance (VDS
≥
15 Vdc, ID = 7.0 Adc)
RDS(on)
VDS(on)
—
0.67
0.8
Ohm
—
—
12.3
—
13.4
11.8
Vdc
gFS
10
12
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
7230
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
462
Reverse Transfer Capacitance
—
61
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
)
RG = 9.1
td(on)
tr
td(off)
tf
—
49
ns
Rise Time
(VDD = 500 Vdc, ID = 14 Adc,
VGS = 10 Vdc,
—
98
Turn–Off Delay Time
—
132
Fall Time
—
83
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
142
nC
(VDS = 500 Vdc, ID = 14 Adc,
—
34
—
—
46
—
—
56
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 14 Adc, VGS = 0 Vdc)
(IS = 14 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.36
1.26
1.5
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
—
831
—
ns
(IS = 14 Adc, VGS = 0 Vdc,
ta
tb
—
364
—
—
467
—
Reverse Recovery Stored Charge
QRR
—
15.3
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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| MTY14N100 | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
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| MTY30N50 | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
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