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參數(shù)資料
| 型號： | MTY14N100 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
| 中文描述： | TMOS是14安培，功率場效應(yīng)晶體管1000伏特的RDS（on）\u003d 0.80歐姆 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 232K |
| 代理商： | MTY14N100 |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
100000
10000
1000
100
10
1
0
100
200
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
300
400
500
600
700
800
900 1000
100
°
C
25
°
C
2.5
2.0
1.5
1.0
0.5
0
–50
–25
0
TJ, JUNCTION TEMPERATURE (
°
C)
25
50
75
100
125
150
VGS = 10 V
ID = 7 A
0.85
0.8
0.75
0.7
0.65
0.6
0
4
8
ID, DRAIN CURRENT (AMPS)
12
16
24
20
15 V
1.6
1.2
0.8
0
0
4
8
ID, DRAIN CURRENT (AMPS)
12
16
20
25
°
C
0.4
24
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
30
25
20
15
10
5
0
2
3
4
5
6
TJ = 25
°
C
VGS = 10 V
VDS
≥
10 V
VGS = 10 V
TJ = 100
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
VGS = 0 V
TJ = 125
°
C
6 V
5 V
8 V
100
°
C
25
°
C
TJ = –55
°
C
28
28
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PDF描述 |
|---|---|
| MTY25N60E | TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM |
| MTY30N50 | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| MTY30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| MTY55N20E | TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTY14N100E | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTY160A | 制造商:LIUJING 制造商全稱:LIUJING 功能描述:可控硅、晶閘管 |
| MTY16N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
| MTY200A | 制造商:LIUJING 制造商全稱:LIUJING 功能描述:可控硅、晶閘管 |
| MTY250A | 制造商:LIUJING 制造商全稱:LIUJING 功能描述:可控硅、晶閘管 |
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