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參數(shù)資料
| 型號(hào)： | MTW8N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Power MOSFET 8 Amps, 600 Volts N-Channel(8A，600V，N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 8 A, 600 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | MTW8N60E |
MTW8N60E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
0
2
4
6
8
10
12
16
8
1
3
5
7
9
4
5 V
6 V
VGS = 10 V
VDS
≥
10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
5.6
6.0
10
14
16
8
12
4
0
TJ = -55
°
C
25
°
C
100
°
C
2
6
TJ = 25
°
C
VGS = 10 V
15 V
0.38
0.43
0.46
0.40
1
3
9
12
14
2
8
10
13
15 16
VGS = 0 V
0
200
400
0.1
100
10000
100
300
600
1.0
500
25
°
C
TJ = 125
°
C
2
4
8
12
0.16
0.36
0.56
0.86
0.66
0.46
0.26
6
10
14
16
TJ = 100
°
C
25
°
C
-55
°
C
0.76
VGS = 10 V
-50
0.4
0.8
1.2
2.0
2.8
-25
0
25
50
75
100
125
150
VGS = 10 V
ID = 4 A
4 V
14
10
6
2
10
1000
0.42
0.44
0.45
0.41
0.39
4
6
5
7
11
2.4
1.6
0
100
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW8N60E/D | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| MTWB 1552 | 制造商:Signal Construct GmbH 功能描述: |
| MTWB 1562 | 制造商:Signal Construct GmbH 功能描述: |
| MTWB 4062 | 制造商:Signal Construct GmbH 功能描述: |
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