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參數(shù)資料
| 型號(hào)： | MTW35N15E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
| 中文描述： | 35 A, 150 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | MTW35N15E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
10
1000
A
I
1.0
0
25
50
75
100
125
600
300
100
ID = 35 A
500
100
150
t, TIME (s)
Figure 13. Thermal Response
r
T
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0.2
0.05
0.1
1.0E–05
1.0E–04
1.0E–03
0.01
1.0E–02
1.0E–01
1.0E+00
1.0E+01
1.0
0.01
1 ms
10 ms
DC
0.1
10
μ
s
200
400
D = 0.05
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100
μ
s
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
SINGLE PULSE
0.1
1000
10
1.0
100
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