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參數(shù)資料
| 型號(hào)： | MTW26N15E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM |
| 中文描述： | 26 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 160K |
| 代理商： | MTW26N15E |
1
Motorola, Inc. 1996
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N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
150
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
— Non–Repetitive (tp
≤
10 ms)
150
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
26
19.4
78
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
150
1.2
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 26 Apk, L = 2.4 mH, RG = 25
)
810
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
0.83
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTW26N15E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
26 AMPERES
150 VOLTS
RDS(on) = 0.095 OHM
CASE 340K–01, Style 1
TO–247AE
Motorola Preferred Device
D
S
G
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| MTW8N60E | TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
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| MTW2812D | 制造商:INTERPOINT 制造商全稱:INTERPOINT 功能描述:–55°C to +85°C operation 18 to 40 VDC input 50 V for 50 ms transient protection |
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