參數(shù)資料
型號: MTW24N40E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM
中文描述: 24 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
文件頁數(shù): 3/8頁
文件大?。?/td> 174K
代理商: MTW24N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
0
10
20
30
40
50
0
2.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4.0
6.0
8.0
10
0
20
30
40
50
Figure 1. On–Region Characteristics
ID
2.0
3.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
3.5
4.0
4.5
5.0
0
20
30
40
50
ID
Figure 2. Transfer Characteristics
0
10
20
30
40
50
0
0.1
0.2
0.3
0.4
0.12
0.13
0.15
0.17
0.19
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0
1.0
2.0
2.5
3.0
0
100
200
300
400
1
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
VGS = 0 V
VGS = 10 V
ID = 12 A
TJ = 25
°
C
10
9 V
8 V
7 V
6 V
5 V
4 V
VGS = 10 V
VDS
10 V
100
°
C
25
°
C
TJ = –55
°
C
10
5.5
6.0
6.5
7.0
2.5
0.05
0.15
0.25
0.35
TJ = 100
°
C
25
°
C
–55
°
C
VGS = 10 V
0.14
0.16
0.18
TJ = 25
°
C
VGS = 10 V
0.5
1.5
TJ = 125
°
C
100
°
C
25
°
C
15 V
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