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參數(shù)資料
| 型號： | MTW16N40E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM |
| 中文描述： | 16 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 217K |
| 代理商： | MTW16N40E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
—
—
420
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 320 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
0.25
1.0
mAdc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 8.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 16 Adc)
(ID = 8.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.225
0.24
Ohm
—
—
—
—
4.8
4.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)
gFS
8.0
10
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
2570
3600
pF
Output Capacitance
—
330
460
Reverse Transfer Capacitance
—
82
164
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 200 Vdc, ID = 16 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
td(on)
tr
td(off)
tf
—
29
50
ns
Rise Time
—
62
70
Turn–Off Delay Time
—
76
170
Fall Time
)
—
57
95
Gate Charge
(See Figure 8)
(VDS = 320 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
QT
—
66
93
nC
Q1
Q2
Q3
—
17
—
—
31
—
—
30
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 16 Adc, VGS = 0 Vdc)
(IS = 16 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.0
0.9
1.6
—
Vdc
Reverse Recovery Time
(See Figure 9)
(IS = 16 Ad
(S
dIS/dt = 100 A/
μ
s)
V
0 Vd
trr
ta
tb
—
340
—
ns
—
228
—
GS
,
—
112
—
Reverse Recovery Stored Charge
QRR
—
4.3
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
5.0
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相關PDF資料 |
PDF描述 |
|---|---|
| MTW20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
| MTW23N25E | TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
| MTW24N40E | TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM |
| MTW32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
| MTW32N25 | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
相關代理商/技術參數(shù) |
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|---|---|
| MTW206N | 制造商:Knitter-Switch 功能描述:Bulk |
| MTW20N20E | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTW20N50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
| MTW23N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
| MTW24N40E | 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
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