參數(shù)資料
型號: MTV32N20E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
中文描述: 32 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 6/10頁
文件大小: 264K
代理商: MTV32N20E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
A
I
25
50
75
100
125
150
t, TIME (s)
Figure 13. Thermal Response
r
T
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
600
450
300
750
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
1.0
1.0
10
100
0.1
dc
10
μ
s
1.0 ms
10 ms
1000
150
ID = 32 A
1.0
0.1
0.001
0.01
1.0E–02
1.0E–01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 0.7
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
0.1 ms
相關(guān)PDF資料
PDF描述
MTW16N40E TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
MTW20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM
MTW23N25E TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM
MTW24N40E TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM
MTW32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
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