參數(shù)資料
型號： MTSF3N03HDR2
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 3800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： MICRO-8
文件頁數(shù)： 6/12頁
文件大小： 138K
代理商： MTSF3N03HDR2
MTSF3N03HD
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(Notes 2. & 4.)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
–
27
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
1.0
25
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(Note 4.)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.5
4.5
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(Note 4.)
(VGS = 10 Vdc, ID = 3.8 Adc)
(VGS = 4.5 Vdc, ID = 1.9 Adc)
RDS(on)
–
35
45
40
60
m
Forward Transconductance (VDS = 10 Vdc, ID = 1.9 Adc)
gFS
2.0
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
420
–
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
190
–
Transfer Capacitance
f = 1.0 MHz)
Crss
–
65
–
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
7.0
–
ns
Rise Time
(VDS = 15 Vdc, ID = 3.7 Adc,
tr
–
19
–
Turn–Off Delay Time
(VDS 15 Vdc, ID 3.7 Adc,
VGS = 10 Vdc, RG = 6 ) (Note 2.)
td(off)
–
32
–
Fall Time
tf
–
36
–
Turn–On Delay Time
td(on)
–
7.0
–
ns
Rise Time
(VDD = 15 Vdc, ID = 1.9 Adc,
tr
–
11
–
Turn–Off Delay Time
(VDD 15 Vdc, ID 1.9 Adc,
VGS = 4.5 Vdc, RG = 6 ) (Note 2.)
td(off)
–
29
–
Fall Time
tf
–
23
–
Gate Charge
QT
–
18.5
26
nC
(VDS = 24 Vdc, ID = 3.7 Adc,
Q1
–
1.4
–
(VDS 24 Vdc, ID 3.7 Adc,
VGS = 10 Vdc)
Q2
–
5.5
–
Q3
–
7.1
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.7 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 3.7 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
–
0.82
0.7
1.0
–
Vdc
Reverse Recovery Time
(I
37Ad
V
0Vd
trr
–
28
–
ns
(IS = 3.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (Note 2.)
ta
–
14
–
dIS/dt = 100 A/s) (Note 2.)
tb
–
14
–
Reverse Recovery Storage Charge
QRR
–
0.028
–
C
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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