參數(shù)資料
型號: MTP60N05
廠商: Motorola, Inc.
英文描述: TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM
中文描述: TMOS是功率場效應晶體管50伏特,60安培的RDS(on)\u003d 0.014歐姆
文件頁數(shù): 3/8頁
文件大小: 166K
代理商: MTP60N05
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
–55
°
C
2.5 V
VGS = 10 V
R
(
R
R
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (
°
C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
ID, DRAIN CURRENT (AMPS)
ID
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
1.0
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
0
20
40
80
120
100
60
0
20
40
80
120
100
60
1.5
2.0
2.5
4.0
3.0
3.5
0.006
0.008
0.012
0.016
0.018
0.014
0.010
0
20
40
60
80
120
100
0
20
40
60
80
120
100
0.006
0.008
0.010
0.012
0.014
0.013
0.011
0.009
0.007
– 50
– 25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.4
1.8
1.2
1.6
1.0
10
100
10,000
5.0
10
20
35
40
50
30
110
10
30
50
70
90
45
15
25
1000
TJ = 25
°
C
8.0 V
6.0 V
3.0 V
3.5 V
5.0 V
4.5 V
4.0 V
VDS
10 V
TJ = 125
°
C
25
°
C
–55
°
C
TJ = 100
°
C
25
°
C
TJ = 25
°
C
VGS = 5.0 V
10 V
VGS = 10 V
ID = 5.0 A
VGS = 0 V
100
°
C
TJ = 125
°
C
25
°
C
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相關代理商/技術參數(shù)
參數(shù)描述
MTP60N05HDL 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM
MTP60N06 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
MTP60N06HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
MTP60N06HD_L86Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTP60N10E7L 制造商:ON Semiconductor 功能描述: