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參數(shù)資料
| 型號(hào)： | MTP55N06 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
| 中文描述： | TMOS是55安培，功率場(chǎng)效應(yīng)晶體管60伏特的RDS（on）\u003d 18毫歐 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 143K |
| 代理商： | MTP55N06 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
V(BR)DSS
60
—
—
53
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
VGS(th)
2.0
—
3.0
6.0
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 27.5 Adc)
(Cpk
≥
2.0)
RDS(on)
—
14
16
m
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 55 Adc)
(ID = 27.5 Adc, TJ = 125
°
C)
VDS(on)
—
—
0.825
0.74
1.2
1.0
Vdc
Forward Transconductance (VDS = 4.0 Vdc, ID = 27.5 Adc)
gFS
12
15
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
—
1390
1950
pF
Output Capacitance
—
520
730
Transfer Capacitance
Crss
—
119
238
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 30 Vd
VGS(on)= 10 Vdc
VGS(on) = 10 Vdc,
RG = 9.1
I
55 Ad
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
27
54
ns
Rise Time
—
157
314
Turn–Off Delay Time
—
116
232
Fall Time
)
—
126
252
Gate Charge
(See Figure 8)
(VDS = 48 Vdc,D
(DS
VGS = 10 Vdc)
—
40
56
nC
—
7.0
—
,
—
18
—
—
15
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 55 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.93
0.82
1.1
—
Vdc
Reverse Recovery Time
(IS = 55 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
57
—
ns
—
32
—
,
—
25
—
Reverse Recovery Stored Charge
QRR
—
0.11
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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