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參數(shù)資料
| 型號： | MTP50P03HDL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 50 Amps, 30 Volts, Logic Level(50A,30V,TO220,P溝道功率MOSFET) |
| 中文描述： | 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 73K |
| 代理商： | MTP50P03HDL |
Semiconductor Components Industries, LLC, 2003
January, 2003 - Rev. 4
1
Publication Order Number:
MTP50P03HDL/D
MTP50P03HDL
Preferred Device
Power MOSFET
50 Amps, 30 Volts, Logic Level
P-Channel TO-220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain-to-source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
30
Vdc
Drain-Gate Voltage (R
GS
= 1.0 M )
V
DGR
30
Vdc
Gate-Source Voltage
- Continuous
- Non-Repetitive (t
p
≤
10 ms)
V
GS
V
GSM
±
15
±
20
Vdc
Vpk
Drain Current - Continuous
Drain Current
- Continuous @ 100
°
C
Drain Current
- Single Pulse (t
p
≤
10 s)
I
D
I
D
I
DM
50
31
150
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
P
D
125
1.0
Watts
W/
°
C
Operating and Storage Temperature
Range
T
J
, T
stg
- 55 to
150
°
C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, Peak
I
L
= 50 Apk, L = 1.0 mH, R
G
= 25 )
E
AS
1250
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient, when mounted
with the minimum recommended pad size
R
JC
R
JA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10
seconds
T
L
260
°
C
D
S
G
P-Channel
50 AMPERES
30 VOLTS
R
DS(on)
= 25 m
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP50P03HDL
TO-220AB
50 Units/Rail
TO-220AB
CASE 221A
STYLE 5
12
3
4
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
M50P03HDL= Device Code
DATE
= Date Code, character count
may vary based on
manufacturing location.
M50P03HDL
DATE
1
Gate
3
Source
2
Drain
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP50P03HDLG | 功能描述:MOSFET PFET T0220 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP50P03HDLG | 制造商:ON Semiconductor 功能描述:MOSFET P TO-220 |
| MTP50S | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 50A |
| MTP50W | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Glass Passivated Triple-Phase Bridge Rectifier, 50A |
| MTP5210F3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-Channel Enhancement Mode Power MOSFET |
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