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參數(shù)資料
| 型號： | MTP36N06V |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM |
| 中文描述： | 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 188K |
| 代理商： | MTP36N06V |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
61
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.6
6.0
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150
°
C)
RDS(on)
VDS(on)
—
0.034
0.04
Ohm
—
—
1.25
—
1.54
1.47
Vdc
Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc)
gFS
5.0
7.83
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1220
1700
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
337
470
Reverse Transfer Capacitance
—
74.8
150
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
—
14
30
ns
Rise Time
(VDD = 30 Vdc, ID = 32 Adc,
VGS = 10 Vdc,
—
138
270
Turn–Off Delay Time
—
54
100
Fall Time
—
91
180
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
39
50
nC
(VDS = 48 Vdc, ID = 32 Adc,
—
7.0
—
—
17
—
—
13
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc, TJ = 150
°
C)
VSD
—
—
1.03
0.94
2.0
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
—
92
—
ns
(IS = 32 Adc, VGS = 0 Vdc,
—
64
—
tb
—
28
—
Reverse Recovery Stored Charge
QRR
—
0.332
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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PDF描述 |
|---|---|
| MTP36N06 | TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM |
| MTP3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM |
| MTP3N120E | TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM |
| MTP3N25E | TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
| MTP3N50E | TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
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