參數資料
型號: MTP2N40E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
中文描述: 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數: 3/8頁
文件大?。?/td> 217K
代理商: MTP2N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
VGS = 10 V
4
3.2
2.4
1.6
0.8
0
20
16
12
8
4
0
8 V
7 V
6 V
5 V
4
3
2
1
0
2
3
4
5
6
7
8
VDS
10 V
TJ = –55
°
C
25
°
C
100
°
C
VGS = 10 V
TJ = 100
°
C
25
°
C
–55
°
C
8
6
4
2
0
4
3
2
1
0
TJ = 25
°
C
VGS = 10 V
15 V
5
4.5
4
3.5
3
2.5
0
0.5
1
1.5
2
2.5
3
3.5
4
VGS = 10 V
ID = 1 A
2.5
2
1.5
1
0.5
0
–50
–25
0
25
50
75
100
125
150
VGS = 0 V
1000
100
10
0
100
200
300
400
TJ = 25
°
C
TJ = 125
°
C
相關PDF資料
PDF描述
MTP2N50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
MTP2N60 TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
MTP2N60E TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
MTP2P50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
MTP2P50 TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
相關代理商/技術參數
參數描述
MTP2N45 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
MTP2N50 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
MTP2N50E 制造商:Motorola Inc 功能描述:
MTP2N60 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
MTP2N60E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS