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參數(shù)資料
| 型號： | MTP1N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MTP1N60E |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. XXX
1
Publication Order Number:
MTP1N60E/D
MTP1N60E
Preferred Device
Power MOSFET
1 Amp, 600 Volts
NChannel TO220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, the MOSFET is designed to
withstand high energy in the avalanche and commutation modes. The
new energy efficient design also offers a draintosource diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
600
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
600
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
1.0
0.8
3.0
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
50
0.4
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 3.0 Apk, L = 10 mH, RG = 25 )
EAS
45
mJ
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
2.50
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1 AMPERE
600 VOLTS
RDS(on) = 8
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP1N60E
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP1N60E = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP1N60E
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
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